PART |
Description |
Maker |
IRF7303 IRF7303TR |
Generation V Technology 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
|
International Rectifier http://
|
IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
IRF7313PBF IRF7313TRPBF IRF7313PBF-15 |
HEXFET Power MOSFET Generation V Technology
|
IRF[International Rectifier]
|
IRF9952PBF IRF9952TRPBF |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel generation v technology
|
International Rectifier
|
SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG Infineon Technologies A...
|